Chamferless via structures

ABSTRACT

Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.

FIELD OF THE INVENTION

The invention relates to semiconductor structures and, moreparticularly, to chamferless via structures and methods of manufacture.

BACKGROUND

Integrated circuit(s) typically include a plurality of semiconductordevices and interconnect wiring. Networks of metal interconnect wiringtypically connect the semiconductor devices from a semiconductor portionof a semiconductor substrate. Multiple levels of metal interconnectwiring above the semiconductor portion of the semiconductor substrateare connected together to form a back-end-of-the line (BEOL)interconnect structure.

Several developments have contributed to increased performance ofcontemporary ICs. One such development is technology scaling whichresults in higher integration of structures, e.g., transistors, wiring,etc. However, technology scaling has posed several challenges including,e.g., process variation, stricter design rules, etc. For example, intrench first via last metal hardmask integration schemes, excessivenon-self-aligned via (Non-SAV) chamfering can result during trenchformation. This integration scheme results in chamfering which is verydifficult to control, and can result in poor yields, jagged surfaces andshorting issues.

SUMMARY

In an aspect of the invention, a method comprises: forming at least oneself-aligned via within at least dielectric material; plugging the atleast one self-aligned via with material; forming a protectivesacrificial mask over the material which plugs the at least oneself-aligned via, after a recessing process; forming at least one trenchwithin the dielectric material, with the protective sacrificial maskprotecting the material during the trench formation; removing theprotective sacrificial mask and the material within the at least oneself-aligned via to form a wiring via; and filling the wiring via andthe at least one trench with conductive material.

In an aspect of the invention, a method comprises: forming at least oneself-aligned via within an optical planar layer and ultra low-kdielectric material; plugging the at least one self-aligned via withmaterial selective to the ultra low-k dielectric material; recessing thematerial; removing the optical planar layer and underlying etch stopmaterial to expose the ultra low-k dielectric material, wherein theremoving step further recesses the material to below spacers formedabove the ultra low-k dielectric material; forming a protectivesacrificial mask over the material which plugs the at least oneself-aligned via; forming at least one trench within the dielectricmaterial, with the protective sacrificial mask protecting the materialduring the forming of the at least one trench; removing the protectivesacrificial mask and the material within the at least one self-alignedvia to form a wiring via; and filling the wiring via and the at leastone trench with conductive material.

In an aspect of the invention, a structure comprises a conductive lineand via formed in a low-k dielectric material wherein the via ischamferless and the low-k dielectric material is continuous with no etchstop layer at a line/via junction.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

Prior to discussing the particulars of each of the figures, it is to benoted that each set of figures include a cross sectional view of astructure along a self-aligned via (SAV) direction, e.g., FIGS. 1A, 2A,3A, 4A, 5A, 6A, 7A, 8A, 9A and 10A, and a set of figures including across sectional view of a structure along a non-self-aligned via(non-SAV) direction, e.g., FIGS. 1B, 2B, 3B, 4B, 5B, 6B, 7B, 8B, 9B and10B.

FIG. 1A shows a cross sectional view of a beginning structure andrespective fabrication processes along a self-aligned via (SAV)direction; whereas, FIG. 1B shows a cross sectional view of thestructure of FIG. 1A along a non-SAV direction, in accordance withaspects of the invention.

FIGS. 2A and 2B show structures with openings and respective fabricationprocesses in accordance with aspects of the invention.

FIGS. 3A and 3B show structures with via fill material within theopenings and respective fabrication processes in accordance with aspectsof the invention.

FIGS. 4A and 4B show the via fill material recessed within the openingsand respective fabrication processes in accordance with aspects of theinvention.

FIGS. 5A and 5B show additional structures within the fabricationprocesses, and respective fabrication processes in accordance withaspects of the invention.

FIGS. 6A and 6B show additional structures within the fabricationprocesses, and respective fabrication processes in accordance withaspects of the invention.

FIGS. 7A and 7B shows a protective sacrificial mask on exposed portionsof the via fill material amongst other structures, and respectivefabrication processes in accordance with aspects of the invention.

FIGS. 8A and 8B show a plurality of trenches within dielectric material,and respective fabrication processes in accordance with aspects of theinvention.

FIGS. 9A and 9B show chamferless wiring vias, and respective fabricationprocesses in accordance with aspects of the invention.

FIGS. 10A and 10B show metal fill material within the chamferless wiringvias (wiring lines), and respective fabrication processes in accordancewith aspects of the invention.

FIG. 11A shows a top view of FIG. 10A.

FIG. 11B shows a top view of FIG. 10B.

DETAILED DESCRIPTION

The invention relates to semiconductor structures and, moreparticularly, to chamferless via structures and methods of manufacture.In embodiments, the present invention implements a protectivesacrificial mask, e.g., Ruthinium, in order to protect a via structureduring back end of the line (BEOL) processing. In embodiments, theRuthinium or other protective sacrificial mask material described hereinwill protect gap fill material and underlying materials, e.g., TitaniumNitride (TiN) hardmask, during trench interlevel dielectric (ILD)reactive ion etching (RIE) processes. The protection provided by theprotective sacrificial mask will reduce via CD (critical dimension)increase and improve non-SAV (self-aligned via) angle and chamferroughness caused by ILD damage caused during the trench ILD RIE process.In this way, the processes of the present invention can be used to forma chamferless via structure.

In embodiments, the fabrication processes include making a chamferlessvia structure of a dual damascene line/via formed in an ultra-low kdielectric material. In more specific embodiments, the fabricationprocesses include, amongst other steps, using a gap fill material (e.g.,SiARC) in a via opening etched in a low-k dielectric material, whiletrench openings are subsequently formed in the low-k dielectricmaterial. In embodiments, the gap fill material can be protected withselectively formed Ruthenium, which is used as a mask during trenchopening formation processes. Advantageously, the processes describedherein will result in final wiring structures comprising a dualdamascene line and via formed in a low-k dielectric wherein the via ischamferless and the low-k dielectric material is continuous (e.g., thereis no intermediate etch stop layer at the dual damascene line/viajunction).

The chamferless via structures of the present invention can bemanufactured in a number of ways using a number of different tools. Ingeneral, though, the methodologies and tools are used to form structureswith dimensions in the micrometer and nanometer scale. Themethodologies, i.e., technologies, employed to manufacture thechamferless via structures of the present invention have been adoptedfrom integrated circuit (IC) technology. For example, the structures ofthe present invention are built on wafers and are realized in films ofmaterial patterned by photolithographic processes on the top of a wafer.In particular, the fabrication of the chamferless via structures of thepresent invention uses three basic building blocks: (i) deposition ofthin films of material on a substrate, (ii) applying a patterned mask ontop of the films by photolithographic imaging, and (iii) etching thefilms selectively to the mask.

Now referring to the figures, as shown in FIGS. 1A and 1B, the structure10 includes a metal layer 12, e.g., copper or tungsten, amongst othermetal or metal alloys. A block material 14 such as an NBLOK is formed onthe metal layer 12. In embodiments, the block material 14 can be about20 nm in depth, although other dimensions are contemplated by thepresent invention. A dielectric material 16 is formed on the blockmaterial 14. In embodiments, the dielectric material 16 is an ultralow-k dielectric material known to those of ordinary skill in the art.The dielectric material 16 can be formed to a thickness of about 100 nm;although other dimensions are also contemplated by the presentinvention.

Still referring to FIGS. 1A and 1B, a thin film of etch stop layer orhardmask material 18, e.g., alloy material, is deposited on thedielectric material 16. In embodiments, the thin film of etch stop layeror hardmask material 18 can be SiNH deposited to a thickness of about 10nm; although other dimensions are also contemplated by the presentinvention. Another hardmask 20, e.g., TiN, is deposited on the thin filmof etch stop layer or hardmask material 18, followed by the formation ofspacers 22, e.g., nitride material. The hardmask 20 and spacers 22 canbe formed using conventional deposition processes, e.g., CVD, followedby lithography and etching, e.g., RIE, processes known to those ofordinary skill in the art such that further description is not requiredfor an understanding of the invention. The lithography and etchingprocess will result in a self-aligned via structure as described herein.

Still referring to FIGS. 1A and 1B, an optical planarization layer (OPL)24 can be deposited over the structure, e.g., hardmask 20 and spacers 22and exposed portions of the thin film of etch stop layer or hardmask 18.In embodiments, the OPL 24 can be spun on and baked, or can be depositedby CVD. OPL can be baked at lower temperatures, such as 150-200° C. toavoid damaging any other materials. A hardmask 26 is deposited on theOPL 24. In embodiments, the hardmask 26 is a low temperature oxidedeposited to a thickness of about 30 nm; although other dimensions arealso contemplated by the present invention.

The hardmask 26 is patterned to form openings 28. In embodiments, theopenings 28 are formed by conventional lithography and etchingprocesses. For example, a resist is formed over the hardmask 26, whichis exposed to energy (light) to form a pattern (openings). A reactiveion etching (RIE) process is at performed through the openings of theresist to fort the openings 28 in the hardmask 26. The resist is thenremoved using conventional stripants or oxygen ashing processes.

As shown in FIGS. 2A and 2B, openings 30 (e.g., self-aligned viastructures 30), are formed in the materials to the underlying metallayer 12. As shown in FIG. 2A, the self-aligned via structures 30 extendbetween the spacers 22 and the hardmask 20, and expose the underlyingmetal layer 12. The self-aligned via structures 30 can be formed throughseveral selective etch chemistries, selective for each of the materials.The different chemistries will be selective to different materials asshould be known to those of ordinary skill in the art such that furtherdescription is not required for an understanding of the invention.

In embodiments, the different etching steps can be provided within thesame etch chamber, as an example. For example, a first etch chemistry isused to remove portions of the OPL 24. A second etch chemistry is thenused to remove the etch stop layer 18, with subsequent etch chemistriesused to remove the dielectric layer 16 and hardmask layer 14,respectively. In this way, the underlying metal layer 12 can be exposed.

In embodiments, the self-aligned via structures 30 can undergo a wetetching process to remove any residual RIE residue to improve filladhesion. In embodiments, the self-aligned via structures 30 can have anaspect ratio of, e.g., about 15:1. For example, in embodiments, thedimensions of the self-aligned via structures 30 in the SAV directioncan be about 20 nm, whereas, the dimensions of the self-aligned viastructures 30 in the non-SAV direction can be about 30 nm.

In FIGS. 3A and 3B, a via fill material 32 is deposited within theself-aligned via structures 30. During this deposition process, residualvia fill material 32 may form on the surface of the OPL 24. Inembodiments, the via fill material 32 can be SiARC (e.g., antireflectivecoating of Si). In alternate embodiments, the via fill material 32 canbe an OPL. In still additional alternate embodiments, the via fillmaterial 32 can be a spin on material, e.g., spin on glass. In stilladditional alternate embodiments, the via fill material 32 can be anoxide such as an ultra porous material, e.g., ultra low-k dielectricmaterial such as SiCOH.

In embodiments, the via fill material 32 should have a viscosity thatallows complete fill of the self-aligned via structures 30. In alternateembodiments, the via fill material 32 may not completely fill theself-aligned via structures 30. For example, air gaps can be providedbelow the etch stop layer 18, e.g., at the dielectric layer 16. Inembodiments, the via fill material 32 does not need to be planarized orconform to photolithography specifications.

In FIGS. 4A and 4B, the via fill material 32 is etched slightly to formrecesses 34 within the OPL 24. In embodiments, the recesses 34 can betuned to specific dimensions based on etch rates and chemistries.Following the recess of the via fill material 32, the OPL material andadditional portions of the via fill material 32 are removed as shown inFIGS. 5A and 5B. These materials can be removed by selective etchingchemistries as described herein.

In FIGS. 6A and 6B, any exposed etch stop layer material 18 can beremoved using a selective etch chemistry. This selective etch chemistrycan also remove portions of the via fill material 32 to below thespacers 22. In embodiments, the removal of the etch stop layer material18 will allow the formation of a trench structure in subsequentfabrication processes.

In FIGS. 7A and 7B, a protective sacrificial mask 34 is formed on theexposed portions of the via fill material 32. The protective sacrificialmask 34 can also be formed on exposed portions of the etch stop layer 18and hardmask 20. In embodiments, the protective sacrificial mask 34 is aselective deposition material, which does not deposit or adhere tooxide, e.g., dielectric material 16. In this way, the dielectricmaterial 16 remains exposed for future trench formation processing.

By way of example and as discovered by the inventors, the protectivesacrificial mask 34 can be Ruthinium. Advantageously, Ruthinium does notadhere to oxide, dielectric material 16, but will adhere to organics andmetals. Also, Ruthinium has been found to be resistant to etchchemistries used for trench formation processes. In embodiments, theprotective sacrificial mask 34 can be formed by an atomic layerdeposition (ALD) process, controllable to 1 nm.

As shown in FIGS. 8A and 8B, the exposed dielectric material 16undergoes etching processes to form a trench 36. In embodiments, theprotective sacrificial mask 34 will protect the underlying materialsand, more specifically, the self-aligned via structures 30. In this way,the self-aligned via structures 30 will not become damaged duringprocessing of the trenches 36. The trenches 36 can have a depth of about60 nm to about 80 nm; although other dimensions are also contemplated bythe present invention.

As shown in FIGS. 9A and 9B, the protective sacrificial mask 34, theetch stop layer 18 and hardmask 20 can be removed, followed by removalof the via fill material 32. In embodiments, the via fill material 32will protect the underlying metal layer 12 during the removal of theprotective sacrificial mask 34, etch stop layer 18 and hardmask 20,allowing for aggressive removal of the etch stop layer 18 and hardmask20. In embodiments, the protective sacrificial mask 34, etch stop layer18 and hardmask 20 can be removed using a wet etch process. Moreover, inembodiments, the via fill material 32 can be removed by a dry or wetetch removal process. In embodiments, the via fill material 32 can alsobe removed with the removal of the etch stop layer 18 and/or hardmask20. In any scenario, the removal of the via fill material 32 will form awiring via 38 with vertical sidewalls, e.g., chamferless sidewalls. Byway of example, the sidewall angle would be greater than 85°, andpreferably has a constant angle in the dielectric material 16. In thisway, the wiring via 38 would be chamferless.

As shown in FIGS. 10A and 10B, metal fill material 40 is formed withinthe wiring via 38 and the trench 36. The metal fill material 40 can be acopper material formed by an electroplating process as is well known tothose of skill in the art. In embodiments, prior to the metal fillprocess, any residual RIE material can be cleaned from the wiring via 38and the trenches 36 using a wet etch process, followed by deposition ofa barrier and seed layer. The barrier layer can prevent metal diffusioninto the ultra-low-k dielectric and it can promote seed layer adhesion.After the deposition of a barrier and seed layer, the electroplatingprocess can commence to form metal lines, e.g., metal fill material 40.Any residual metal fill material 40 on a surface of the structure can beremoved by a conventional planarization process, e.g., chemicalmechanical polishing (CMP).

FIG. 11A shows a top view of FIG. 10A. As such, FIG. 10A shows across-sectional view taken along the lines 10A-10A of FIG. 11A. Line10A-10A of FIG. 11A is the SAV direction described above, which shows apair of the vias 38 in the SAV direction in FIG. 10A. More specifically,in FIG. 11A, the SAV direction line 10A-10A cuts through the vias 38 inthe SAV direction 10A-10A to show the view of FIG. 10A with the metalfill material 40 formed in both the self-aligned vias 38 and the trench36. Ridges 42 of the dielectric layer 16 are shown in FIGS. 9A, 10A and11A separating the metal fill material 40 filling the self-aligned vias38 from the metal fill material 40 filling the trench 36.

FIG. 11B, on the other hand, shows a top view of FIG. 10B taken along anon-SAV direction, shown in FIG. 11B as the direction 10B-10B.Specifically, FIG. 11B shows the vias 38 from the direction 10B-10B inwhich the vias 38 are not self-aligned.

The method(s) as described above is used in the fabrication ofintegrated circuit chips. The resulting integrated circuit chips can bedistributed by the fabricator in raw wafer form (that is, as a singlewafer that has multiple unpackaged chips), as a bare die, or in apackaged form. In the latter case the chip is mounted in a single chippackage (such as a plastic carrier, with leads that are affixed to amotherboard or other higher level carrier) or in a multichip package(such as a ceramic carrier that has either or both surfaceinterconnections or buried interconnections). In any case the chip isthen integrated with other chips, discrete circuit elements, and/orother signal processing devices as part of either (a) an intermediateproduct, such as a motherboard, or (b) an end product. The end productcan be any product that includes integrated circuit chips, ranging fromtoys and other low-end applications to advanced computer products havinga display, a keyboard or other input device, and a central processor.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed:
 1. A semiconductor structure, comprising: anon-self-aligned via within a dielectric material, the non-self-alignedvia being chamferless and being a wiring via; a trench within thedielectric material; and a conductive material filling the wiring viaand the trench to form a conductive line in the trench, wherein thetrench extends over a top of the wiring via, and wherein the conductivematerial filling the trench extends over an upper surface of theconductive material filling the wiring via, wherein the dielectricmaterial is a low-k dielectric material which is continuous with no etchstop layer at a conductive line/via junction.
 2. The semiconductorstructure of claim 1, wherein the dielectric material is an ultra low-kmaterial.
 3. A semiconductor structure, comprising: a non-self-alignedvia within a dielectric material, the non-self-aligned via beingchamferless and being a wiring via; a trench within the dielectricmaterial; a conductive material filling the wiring via and the trench,wherein the trench extends over a top of the wiring via, wherein theconductive material filling the trench extends over an upper surface ofthe conductive material filling the wiring via, and wherein thenon-self-aligned via is within an optical planarization layer above thedielectric material.
 4. The semiconductor structure of claim 1, whereinthe wiring via has sidewalls at a sidewall angle greater than 85°. 5.The semiconductor structure of claim 1, further comprising a blockmaterial and a metal layer.
 6. The semiconductor structure of claim 5,wherein the dielectric material is directly on and contacting the blockmaterial.
 7. The semiconductor structure of claim 6, wherein the blockmaterial is directly on and contacting the metal layer.
 8. Thesemiconductor structure of claim 7, wherein: the metal layer is one ofcopper and tungsten; and the dielectric material is an ultra low-kmaterial.
 9. The semiconductor structure of claim 8, wherein thenon-self-aligned via extends completely through the block material. 10.The semiconductor structure of claim 9, wherein the non-self-aligned viastops at the metal layer.
 11. The semiconductor structure of claim 5,wherein the non-self-aligned via extends completely through the blockmaterial.
 12. The semiconductor structure of claim 11, wherein thenon-self-aligned via stops at the metal layer.
 13. The semiconductorstructure of claim 1, wherein the trench extends completely over the topof the wiring via and over an upper surface of the dielectric materialsurrounding the top of the wiring via, and wherein the conductivematerial filling the trench completely covers the upper surface of theconductive material filling the wiring via and covers the upper surfaceof the dielectric material surrounding the top of the wiring via. 14.The semiconductor structure of claim 1, further comprising a secondwiring via in the dielectric material, wherein the trench extendsbetween the wiring via and the second wiring via, and wherein theconductive material filling the trench extends over an upper surface ofconductive material filling the second wiring via.
 15. The semiconductorstructure of claim 14, wherein the trench extends over the top of thewiring via and a top of the second wiring via, and over an upper surfaceof the dielectric material surrounding the tops of the wiring via andthe second wiring via, and wherein the conductive material filling thetrench completely covers upper surfaces of the conductive materialfilling the wiring via and the second wiring via, and extends over theupper surface of the dielectric material surrounding the top of thewiring via and the second wiring via.
 16. The semiconductor structure ofclaim 15, wherein the wiring via has sidewalls at a sidewall anglegreater than 85°.
 17. The semiconductor structure of claim 16, furthercomprising a block material and a metal layer underlying the blockinglayer and the conductive material, wherein the dielectric material isdirectly on and contacting the block material, and wherein the blockmaterial is directly on and contacting the metal layer.
 18. Thesemiconductor structure of claim 17, wherein: the metal layer is one ofcopper and tungsten; and the dielectric material is an ultra low-kmaterial.
 19. A semiconductor structure, comprising: a non-self-alignedvia within a dielectric material, the non-self-aligned via beingchamferless and being a wiring via; a trench within the dielectricmaterial; a conductive material filling the wiring via and the trench,wherein the trench extends over a top of the wiring via, wherein theconductive material filling the trench extends over an upper surface ofthe conductive material filling the wiring via, further comprising asecond wiring via in the dielectric material, wherein the trench extendsbetween the wiring via and the second wiring via, and wherein theconductive material filling the trench extends over an upper surface ofconductive material filling the second wiring via, wherein the trenchextends over the top of the wiring via and a top of the second wiringvia, and over an upper surface of the dielectric material surroundingthe tops of the wiring via and the second wiring via, and wherein theconductive material filling the trench completely covers upper surfacesof the conductive material filling the wiring via and the second wiringvia, and extends over the upper surface of the dielectric materialsurrounding the top of the wiring via and the second wiring via, andwherein the wiring via has sidewalls at a sidewall angle greater than85°, further comprising: a block material and a metal layer underlyingthe blocking layer and the conductive material, wherein the dielectricmaterial is directly on and contacting the block material, and whereinthe block material is directly on and contacting the metal layer; and asecond wiring via in the dielectric material, wherein the low-kdielectric material is continuous with no etch stop layer at a line/viajunction, wherein the dielectric material is an ultra low-k material,wherein the non-self-aligned via is within an optical planarizationlayer above the dielectric material, wherein the wiring via and thesecond wiring via have sidewalls at a sidewall angle greater than 85°,wherein the trench extends between the wiring via and the second wiringvia, wherein the trench extends completely over the top of the wiringvia and a top of the second wiring via, and over an upper surface of thedielectric material surrounding the tops of the wiring via and thesecond wiring via, wherein the conductive material filling the trenchcompletely covers upper surfaces of the conductive material filling thewiring via and the second wiring via, and extends over the upper surfaceof the dielectric material surrounding the top of the wiring via and thesecond wiring via, and wherein the metal layer is one of copper andtungsten.